Optoelectronic device

ABSTRACT

An optoelectronic device includes an emitter of light rays and a receiver of light rays. The emitter is encapsulated in a transparent block. An opaque conductive layer is applied to a top surface and a side surface of the transparent block. The receiver is mounted to the opaque conductive layer at the top surface. An electrical connection is made between the receiver and the opaque conductive layer. A conductive strip is also mounted to the side surface of the transparent block and isolated from the opaque conductive layer. A further electrical connection is made between the receiver and the conductive strip.

PRIORITY CLAIM

This application claims the priority benefit of French Application forPatent No. 1912261, filed on Oct. 31, 2019, the content of which ishereby incorporated by reference in its entirety to the maximum extentallowable by law.

TECHNICAL FIELD

The present disclosure relates generally to optoelectronic devices and,more particularly, to devices comprising an emitter and a receiver oflight rays.

BACKGROUND

Many electronic devices comprise a light ray emitter and a receiverconfigured to receive the rays emitted by the emitter. These, forexample, are time-of-flight (TOF) sensors or optical switches.

A time-of-flight sensor enables to measure a distance between the sensorand an element of a scene. For this purpose, the time-of-flight sensorilluminates the scene with a light ray, and calculates the time taken bythe ray to travel between the element and the sensor. The time of flightof this ray is directly proportional to the distance between the sensorand the object of the scene having its distance to the sensor measured.

An optical switch for example switches from one state to another whenthe distance between the switch and an object of the scene is shorterthan a certain distance.

There is a need in the art to address all or some of the drawbacks ofknown optoelectronic devices.

SUMMARY

One embodiment provides an optoelectronic device comprising an emitterand a receiver of light rays, the receiver being located on a layeropaque to the wavelengths of the rays capable of being emitted by theemitter, the opaque layer extending above the emitter.

According to an embodiment, the receiver faces a portion of the emitterwhich does not emit the light rays.

According to an embodiment, the opaque layer is made of a conductivematerial electrically coupling the receiver to a node of application ofa voltage.

According to an embodiment, the emitter is covered with a first block ofa material at least partially transparent to the wavelengths of thelight rays capable of being emitted by the emitter.

According to an embodiment, the opaque layer at least partially coversthe first block.

According to an embodiment, a strip made of an electrically-conductivematerial opaque to the wavelengths of the rays capable of being emittedby the emitter at least partially extends over the first block, thereceiver being electrically coupled to the strip.

According to an embodiment, the opaque layer totally covers the firstblock except for a region separating the opaque layer and the strip andexcept for the region facing the portion of the emitter intended to emitthe light rays.

According to an embodiment, a second block of a material at leastpartially transparent to the wavelengths of the light rays capable ofbeing emitted by the emitter extends from the first block facing theportion of the emitter intended to emit the light rays, the lateralwalls of the second block being covered with the opaque layer.

According to an embodiment, at least one filter is located opposite theportion of the emitter intended to emit the light rays and the portionof the receiver intended to receive the light rays.

Another embodiment provides a method of manufacturing an optoelectronicdevice comprising a receiver and an emitter of light rays, the methodcomprising forming a layer opaque to the wavelengths of the rays capableof being emitted by the emitter, the opaque layer extending above theemitter, the receiver being located on the opaque layer.

According to an embodiment, the method comprises forming a first blockof a material at least partially transparent to the wavelengths of thelight rays capable of being emitted by the emitter, the first blockcovering the emitter.

According to an embodiment, the method comprises forming a strip of anelectrically-conductive material opaque to the wavelengths of the rayscapable of being emitted by the emitter at least partially extending onthe first block, the receiver being electrically coupled to the strip.

According to an embodiment, the opaque layer is formed to totally coverthe first block except for a region separating the opaque layer and thestrip and except for the region facing the portion of the emitterintended to emit the light rays.

According to an embodiment, the method comprises forming a second blockof a material at least partially transparent to the wavelengths of thelight rays capable of being emitted by the emitter extending from thefirst block facing the portion of the emitter intended to emit the lightrays, the lateral walls of the second block being covered with theopaque layer.

According to an embodiment, the first and second blocks are formed by aresin molding.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing features and advantages, as well as others, will bedescribed in detail in the following description of specific embodimentsgiven by way of illustration and not limitation with reference to theaccompanying drawings, in which:

FIG. 1 is a three-dimensional view of a portion of an embodiment of anoptoelectronic device;

FIG. 2 is a cross-section view of the embodiment of FIG. 1;

FIG. 3 shows a step of manufacturing the embodiment of FIG. 1;

FIG. 4 shows another step of manufacturing the embodiment of FIG. 1;

FIG. 5 shows still another step of manufacturing the embodiment of FIG.1;

FIG. 6 shows still another step of manufacturing the embodiment of FIG.1; and

FIG. 7 is a cross-section view of another embodiment of anoptoelectronic device.

DETAILED DESCRIPTION

Like features have been designated by like references in the variousfigures. In particular, the structural and/or functional features thatare common among the various embodiments may have the same referencesand may dispose identical structural, dimensional and materialproperties.

For the sake of clarity, only the operations and elements that areuseful for an understanding of the embodiments described herein havebeen illustrated and described in detail.

Unless indicated otherwise, when reference is made to two elementsconnected together, this signifies a direct connection without anyintermediate elements other than conductors, and when reference is madeto two elements coupled together, this signifies that these two elementscan be connected or they can be coupled via one or more other elements.

In the following disclosure, unless indicated otherwise, when referenceis made to absolute positional qualifiers, such as the terms “front”,“back”, “top”, “bottom”, “left”, “right”, etc., or to relativepositional qualifiers, such as the terms “above”, “below”, “higher”,“lower”, etc., or to qualifiers of orientation, such as “horizontal”,“vertical”, etc., reference is made to the orientation shown in thefigures.

Unless specified otherwise, the expressions “around”, “approximately”,“substantially” and “in the order of” signify within 10%, and preferablywithin 5%.

FIGS. 1 and 2 show an embodiment of an optoelectronic device 10. FIG. 1is a three-dimensional view of a portion of device 10. FIG. 2 is across-section view of device 10 along cross-section plane A.

Device 10 is, for example, a time-of-flight sensor or an optical switch.Device 10 comprises an emitter 100 (FIG. 2) of light rays and a receiver102 of light rays. The rays emitted by emitter 100 are, for example,infrared rays (having, for example, a wavelength greater than 700 nm).Receiver 102 is configured to receive at least part of the rays emittedby emitter 100. For example, receiver 102 is configured to receive lightrays emitted by emitter 100 and reflected on an element of a scenelocated opposite device 10.

For example, receiver 102 and emitter 100 comprise a circuit, not shown,or are coupled to a circuit, not shown, configured to determine thedistance of an element of a scene based the time between the emission ofthe rays by emitter 100 and their reception by receiver 102.

Device 10 comprises a support 104. Emitter 100 is located on and bondedto support 104. Support 104 is, for example, at least partially made ofan electrically-insulating material.

In the embodiment of FIGS. 1 and 2, conductive pads 106 (not shown inFIG. 1), for example, metal pads, are located on the upper surface ofsupport 104.

Pads 106 are, for example, coupled together and/or to other electroniccomponents (not shown) via connection means, not shown. The connectionmeans are, for example, conductive vias and metallization levels locatedin support 104. The connection means are, for example, conductive trackslocated on the upper surface of support 104.

Emitter 100 is located on a conductive pad 106, designated in FIG. 2with reference 106 a. For example, emitter 100 is bonded to pad 106 a bya bonding layer 108, for example, a glue layer. Preferably, bondinglayer 108 is a conductive layer.

Emitter 100 is, for example, coupled to one or a plurality of otherconductive pads 106 b, for example, by a wire connection, for example,by electric bonding wires. FIG. 2 shows a single pad 106 a and a singlepad 106 b.

Emitter 100 is, for example, coupled to a first node of application of apotential via pad 106 a. Emitter 100 is, for example, coupled to asecond node of application of a potential via pad 106 b.

Device 10 comprises a block 110 covering emitter 100. Block 110 forms aprotection case around emitter 100. Block 110 is made of a material atleast partially transparent to the wavelengths of the rays capable ofbeing emitted by emitter 100. Block 110 is preferably made of anelectrically-insulating material. For example, block 110 is made ofresin. The term material transparent to a wavelength designates amaterial giving way to at least 90% of the rays having this wavelength.

Block 110 covers (for example, encapsulates) emitter 100, conductive pad106 a, and pad(s) 106 b. Block 110, for example, has a parallelepipedalshape. Block 110, for example, comprises a substantially planar uppersurface. The upper surface is, for example, substantially horizontal.The planar upper surface is, for example, substantially parallel to theupper surface of support 104. Block 110 further comprises lateralsurfaces extending from the planar upper surface to the support 104. Thelateral surfaces are, for example, substantially vertical. The lateralsurfaces are, for example, substantially perpendicular to the planarupper surface as well as the upper surface of support 104.

Device 10 further comprises another block 112. Block 112 is made of amaterial at least partially transparent to the wavelengths of the rayscapable of being emitted by emitter 100. Block 112 is preferably made ofan electrically-insulating material. For example, block 112 is made ofresin. Block 112 is preferably made of the same material as block 110.

Block 112 rests on the upper surface of block 110. Block 112 is incontact with the upper surface of block 110. Block 112 faces emitter100. More precisely, block 112 faces the portion of emitter 100 emittingthe light rays. Block 112 is located in such a way that the rays emittedby emitter 100 cross block 110 and then cross block 112 before beingemitted from the device 10 and reaching (i.e., illuminating) the scene.

Block 112 preferably has a parallelepipedal shape. The dimensions ofblock 112 at the level of the contact with block 110 are preferably atleast equal to the dimensions of the portion of emitter 100 emitting thelight rays. The block 112, for example, comprises a substantially planarupper surface. The upper surface is, for example, substantiallyhorizontal. The planar upper surface is, for example, substantiallyparallel to the upper surface of block 110. Block 112 further compriseslateral surfaces extending from the planar upper surface to the block110. The lateral surfaces are, for example, substantially vertical. Thelateral surfaces are, for example, substantially perpendicular to theplanar upper surface as well as the upper surface of block 110.

Block 112 partially covers block 110. The upper surface of block 110thus comprises regions which are not covered by block 112. Inparticular, block 110 comprises a region, not covered by block 112,which is sufficiently large to accommodate the receiver 102.

Device 10 comprises a layer 114 at least partially covering block 110and block 112. Layer 114 preferably totally covers the lateral surfacesof block 112. More precisely, layer 114 totally covers the surfaces ofblock 112 other than the lower surface, that is, the surface in contactwith block 110, and the upper surface of block 112. In other words,layer 114 totally covers the surfaces of block 112 other than thesurfaces crossed by the rays reaching the scene. Layer 114 at leastpartially covers the upper surface and the lateral surfaces of block110.

Layer 114, for example, comprises a portion 115 extending on support104. Portion 115 is, for example, coupled, like conductive pads 106, toconductive pads and/or to other electronic components, via connectionsmeans, for example, conductive vias and metallization levels located insupport 104 or conductive tracks located on the upper surface of support104.

As a variation, layer 114 does not comprise portion 115 and is directlycoupled to the connection means by the portions of layer 114 coveringthe lateral walls of block 110.

Layer 114 is made of a conductive material, for example, of a metal.Layer 114 is made of a material opaque to the wavelengths of the rayscapable of being emitted by the emitter. Layer 114 is, for example, madeof copper. For example, layer 114 is preferably covered with anadditional layer, not shown, made of an alloy comprising nickel andgold. The additional layer which is not shown provides a better bondingto regions 110, 112. Further, the additional layer which is not shownenables to avoid the oxidation of the copper. The thickness of layer 114is, for example, in the range from approximately 10 nm to approximately15 nm. The term material opaque to a wavelength designates a materialpassing less than 0.001% of the rays having this wavelength.

Preferably, layer 114 comprises an opening 116 (shown in FIG. 1, but notshown in FIG. 2). Opening 116 extends, in the example of FIGS. 1 and 2,along the entire height of a lateral surface 118 of block 110. However,opening 116 preferably does not extend over the entire surface 118.Opening 116 preferably partially extends over the upper surface of block110.

A strip 120 extends on block 110, in opening 118. Strip 120 preferablyextends from the upper surface of block 110 to the upper surface ofsupport 104. More precisely, strip 120 partially extends on the uppersurface of block 110, and along the entire height of block 110.Preferably, strip 120 partially extends on the upper surface of support104.

Strip 120 is made of a conductive material, for example, a metal. Strip120 is made of a material opaque to the wavelengths of the rays capableof being emitted by emitter 100. Preferably, strip 120 is made of thesame material as layer 114.

Strip 120 is not in contact with layer 114. Strip 120 is notelectrically connected to layer 114. Strip 120 is, for example, coupled,like conductive pads 106, to conductive pads and/or to other electroniccomponents, for example, by means of the conductive vias and of themetallization levels located in support 104 or by means of theconductive tracks located on the upper surface of support 104.

As a variation, a cavity (not shown) may be located in block 110 at thelevel of opening 116, at the location of strip 120. The depth of opening116 is preferably smaller than or equal, preferably equal, to thethickness of strip 120. Strip 120 is then located in the cavity.

Block 110 is thus entirely covered with a material (layer 114 and strip120) opaque to the wavelengths of the rays capable of being emitted byemitter 100, except for the region in contact with block 112 and for atrench separating and electrically insulating strip 120 from layer 114.

Receiver 102 is located above block 110. Receiver 102 is thus locatedbetween the emitter and the scene. Receiver 102 is separated from theupper surface of block 110, and thus of emitter 100, by layer 114.Receiver 102 is thus located on layer 114 covering the upper surface ofblock 110. Receiver 102 is preferably bonded to layer 114 by a bondinglayer 122, for example, a glue layer. Bonding layer 122 is preferablymade of a conductive material.

Receiver 102 is offset with respect to the portion of emitter 100emitting the rays, to avoid blocking the emission of rays crossing block112. Receiver 102 thus preferably faces a portion of emitter 100 whichdoes not emit the light rays.

Receiver 102 is preferably located close to strip 120. Receiver 102 ispreferably located between block 112 and strip 120. Preferably, receiver102 is sufficiently close to strip 120 to be coupled to strip 120 by anelectric wire.

Receiver 102 is, for example, coupled, on the one hand, to layer 114and, on the other hand, to strip 120. For example, layer 114 is coupledto a node of application of a reference voltage, for example, theground. Receiver 102 is thus, for example, coupled to this node ofapplication of a reference voltage via bonding layer 122 and layer 114.For example, strip 120 is coupled to a node of application of anothervoltage. Receiver 102 is, for example, coupled to a node of applicationof the other voltage via electric wire and strip 120. Similarly, emitter100 is, for example, coupled to nodes of application of voltages viaconnection pads 106.

Device 10 further comprises a block 124 covering (i.e., encapsulating)layer 114, receiver 102, layer 122, and a portion of support 104. Block124 forms a protection case around receiver 102 and blocks 100 and 112.Block 124 is made of a material at least partially transparent to thewavelengths of the rays capable of being emitted by emitter 100. Block124 is preferably made of an electrically-insulating material. Forexample, block 124 is made of resin. Block 112 is preferably made of thesame material as blocks 110 and 112.

Block 124, for example, has a parallelepipedal shape. The upper surfaceof block 124 is, for example, coplanar with the upper surface of block112. Block 124, for example, surrounds block 112 and leaves the uppersurface of block 112 exposed.

As a variation, block 124 may at least partially cover the upper surfaceof block 112.

Filters 126 and 128 are respectively formed opposite emitter 100 andreceiver 102. Preferably, filters 126 and 128 are made of a materialhaving transmittance values that art: smaller than approximately 10% forwavelengths shorter than approximately 650 nm, preferably forwavelengths shorter than 750 nm; and greater than approximately 90% forwavelengths greater than 900 nm, preferably for wavelengths greater than850 nm.

Filter 126, for example, has dimensions substantially equal to orgreater than the dimensions of the region of emitter 100 emitting thelight rays. In particular, filter 126 preferably covers at least theentire surface of block 112. Similarly, filter 128, for example, hashorizontal dimensions substantially equal to or greater than thedimensions of the portion of receiver 102 receiving the rays.

For clarity, block 124 and filters 126 and 128 are not shown in FIG. 1.Similarly, emitter 100, bonding layer 108, and conductive pads 106,located under layer 114, are not shown in FIG. 1.

As a variation, opening 116 may extend over a smaller region, forexample, may not extend over the upper surface of block 110. Theelectric wire extending from the receiver to strip 120 is then longer.

As a variation, layer 114 entirely covers block 110 except for theportions in contact with block 112 or support 104. Emitter 100 is, forexample, coupled by the electric wire to a conductive pad, for example,located on the support.

The path of the light rays emitted by emitter 100 is, for example,comprised of the crossing of the portion of block 110 facing emitter100, the crossing of block 112, the crossing of filter 126, the travelfrom device 10 to an element in the scene, the reflection on the elementin the scene, the travel from the element to device 10, the crossing offilter 128, and the crossing of the portion of block 124 facing receiver102. The presence of layer 114 around blocks 110 and 112, and inparticular between the path of the rays in blocks 110 and 112 andreceiver 102, enables to ensure that receiver 102 receives no raysdirectly from the emitter, that is, receives no rays emitted by emitter100 which have not been reflected on an element in the scene.

FIGS. 3 to 6 show steps, preferably successive, of an embodiment of amethod of manufacturing the device of FIGS. 1 and 2. FIGS. 3 to 6describe the manufacturing of a single device 10. In practice, devices10 are manufactured in wafers, that is, a plurality of devices 10 issimultaneously manufactured on a same wafer. The plurality of devices10, for example, forms an array of devices. Devices 10 are, for example,separated from one another by a distance greater than or equal toapproximately 250 μm. The steps described in relation with FIGS. 3 to 6are simultaneously carried out in a plurality of locations in the wafer.

FIG. 3 shows a step of manufacturing the embodiment of FIG. 1.

During this step, conductive pads 106 are formed on support 104.Similarly, the means for coupling the conductive pads, that is, vias andmetallizations located in the support or conductive tracks located onsupport 104, are formed.

Emitter 100, having been previously manufactured, is then bonded to pad106. For example, emitter 100 is bonded to pad 106 a by bonding layer108 deposited on pad 106.

Connections may also be formed between emitter 100 and pads 106 b. Theconnections are, for example, formed as previously described, forexample, by electric (bonding) wires coupling emitter 100 and pads 106b.

FIG. 4 shows another step of manufacturing the embodiment of FIG. 1.

During this step, block 110 is formed on emitter 100. Preferably, block110 covers conductive pads 106. For example, block 110 is formed byresin molding to encapsulate the emitter 100 and pads 106.

This step further comprises the forming of a portion 114 a of layer 114,including, if need be, the forming of portion 115. This step furthercomprises the forming of strip 120.

According to an embodiment, a layer made of the material of layer 114and of strip 120 is formed over the entire block 110 except for thelocation of opening 116 and the location of block 112. Such locationsare, for example, covered with a mask during the forming of portion 114a and of strip 120.

According to an embodiment, this step comprises the forming of thecavity (not shown) in block 110 at the location of strip 120. Portion114 a and strip 120 are preferably formed after the forming of thecavity.

FIG. 5 shows still another step of manufacturing the embodiment of FIG.1.

During this step, receiver 102, having preferably being previouslyformed, is bonded to portion 114 a. More precisely, receiver 102 isbonded to a region of portion 114 a located on the upper surface ofblock 110.

The step of bonding the receiver, for example, includes the forming ofbonding layer 122 on portion 114 a and the deposition of receiver 102 onlayer 122. Receiver 102 is thus electrically coupled to portion 114 a,for example, by bonding layer 122.

During this step, an electric connection is formed between receiver 102and strip 120. For example, an electric (bonding) wire is formed betweenreceiver 102 and strip 120.

FIG. 6 shows still another step of the manufacturing of the embodimentof FIG. 1.

During this step, block 112 and block 124 are formed.

According to an embodiment, a layer 30 made of the material of blocks112 and 124 is formed on the structure resulting from the previous step.Layer 30 is then etched to form block 124 and block 112. In particular,layer 30 is, for example, etched to be planarized at the level of theupper surface of block 124. Layer 30 is further etched to separate block124 from the blocks 124 of other devices 10 on the same wafer. A trench32 is further etched at the location of the portions of layer 114surrounding block 112. The trench thus extends from the upper surface oflayer 30 and all the way to portion 114 a. Trench 32 thus surroundsblock 112.

As a variation, blocks 112 and 124 may be formed separately, forexample, by using resin shaping molds.

The method of manufacturing the embodiment of FIG. 1 comprises steps,not shown. In particular, during subsequent steps, trench 32 is filledwith a material opaque to the wavelengths of the light rays capable ofbeing emitted by emitter 102. Preferably, the material is the samematerial as the material of portion 114 a of the already-formed layer114.

The method further comprises the forming of filters 126 and 128.

A mask is, for example, formed on the upper surfaces of blocks 112 and124, to cover the locations which are not covered by filters 126 and128. Filters 126 and 128 are then formed at the locations which are notcovered by the mask.

As a variation, a layer made of the material of filter 126 and 128 is,for example, formed to totally cover blocks 112 and 124 and the exposedportions of layer 114. The layer made of the material of filters 126 and128 is then etched to form filters 126 and 128.

The method further comprises a step during which the different devices10 of a same wafer are individualized, that is, for example, support 104is sawn between the different devices 10.

FIG. 7 is a cross-section view of another embodiment of anoptoelectronic device 40.

Device 40 is identical to device 10 except for filters 126 and 128,which are replaced with a layer 42 made of the material of filters 126and 128. Receiver 102 and emitter 100 face a same filter.

In the example of FIG. 7, layer 42 entirely covers block 124 as well asthe upper surface of block 112 and the exposed portions of layer 114.More precisely, layer 42 covers, in this embodiment, the lateralsurfaces of block 124, the upper surface of block 124, the upper surfaceof block 112, and the exposed portions of layer 114.

As a variation, layer 42 may not cover the lateral surfaces of block124.

As a variation, layer 42 may partially cover the upper surface of block124. Preferably, layer 42 covers at least the regions opposite theportions of emitter 100 and receiver 102 emitting and receiving thelight rays.

An advantage of the described embodiments is that each device uses asurface area smaller than the surface area used by a similar devicehaving its emitter 100 and its receiver 102 both formed on support 104.

Another advantage of the described embodiments is that the opaquematerial separates the emitter and the receiver, thus avoiding for raysto reach the receiver without having been reflected on the scene, whichwould disturb the measurement.

Various embodiments and variants have been described. Those skilled inthe art will understand that certain features of these embodiments canbe combined and other variants will readily occur to those skilled inthe art.

Finally, the practical implementation of the embodiments and variantsdescribed herein is within the capabilities of those skilled in the artbased on the functional description provided hereinabove.

Such alterations, modifications, and improvements are intended to bepart of this disclosure, and are intended to be within the spirit andthe scope of the present invention. Accordingly, the foregoingdescription is by way of example only and is not intended to belimiting. The present invention is limited only as defined in thefollowing claims and the equivalents thereto.

The invention claimed is:
 1. An optoelectronic device, comprising: asupport having a top surface including a first electrical pad, a secondelectrical pad and a third electrical pad; an emitter mounted to the topsurface of the support and electrically connected to the firstelectrical pad; a first transparent block mounted to the top surface ofthe support and encapsulating the emitter and the first electrical pad;a first layer of conductive material extending on a side surface and atop surface of the first transparent block, said first layer ofconductive material electrically connected to the second electrical pad;a receiver mounted to the first layer of conductive material at the topsurface of the first transparent block; a second layer of conductivematerial extending on said side surface of the first transparent block,said second layer of conductive material electrically connected to thethird electrical pad and to the receiver.
 2. The optoelectronic deviceof claim 1, further comprising: a second transparent block mounted to atop surface of the first transparent block at a location facing saidemitter.
 3. The optoelectronic device of claim 2, wherein said secondlayer of conductive material further extends on a side surface of thesecond transparent block.
 4. The optoelectronic device of claim 2,further comprising a light filter mounted to a top surface of the secondtransparent block.
 5. The optoelectronic device of claim 1, furthercomprising a third transparent block mounted to the top surface of thesupport and encapsulating the second electrical pad, the thirdelectrical pad, the first and second layers of conductive material andthe receiver.
 6. The optoelectronic device of claim 5, furthercomprising a light filter mounted to a top surface of the thirdtransparent block at a location over said receiver.
 7. Theoptoelectronic device of claim 5, further comprising: a secondtransparent block mounted to a top surface of the first transparentblock at a location facing said emitter.
 8. The optoelectronic device ofclaim 7, wherein said third transparent block further encapsulates thesecond transparent block.
 9. The optoelectronic device of claim 8,further comprising an opaque material between a side surface of thesecond transparent block and the third transparent block.
 10. Theoptoelectronic device of claim 5, further comprising a layer made of alight filtering material mounted to top and side surfaces of the thirdtransparent block.
 11. The optoelectronic device of claim 1, wherein aportion of said second layer of conductive material extends on said topsurface of the first transparent block.
 12. The optoelectronic device ofclaim 1, wherein the first and second layers of conductive material areopaque.
 13. The optoelectronic device of claim 1, further comprising afirst electrical connection between the receiver and the second layer ofconductive material.
 14. The optoelectronic device of claim 1, whereinthe first electrical connection is a wire.
 15. The optoelectronic deviceof claim 13, further comprising a second electrical connection betweenthe receiver and the first layer of conductive material.
 16. Anoptoelectronic device, comprising: an emitter of light rays; a receiverof light rays; a first transparent block encapsulating the emitter; anda layer on a top surface of said first transparent block, wherein saidlayer is opaque to wavelengths of the light rays from the emitter, andwherein the layer extends partially over said emitter; wherein thereceiver is mounted to said layer at the top surface of said firsttransparent block.
 17. The optoelectronic device according to claim 16,wherein the receiver is mounted at a location facing a portion of theemitter where light rays are not emitted.
 18. The optoelectronic deviceaccording to claim 16, wherein the layer is made of anelectrically-conductive material, and wherein the receiver iselectrically coupled to a node of application of a voltage through saidlayer.
 19. The optoelectronic device according to claim 16, wherein thelayer extends on a side surface of the first transparent block.
 20. Theoptoelectronic device according to claim 19, further comprising a stripmade of an electrically-conductive material that is opaque to thewavelengths of the light rays from the emitter, said strip extending onthe side surface of the first transparent block, isolated from thelayer, and wherein the receiver is electrically connected to the strip.21. The optoelectronic device according to claim 19, wherein the layertotally covers surfaces of the first transparent block except for: wherethe strip is located; a first region separating the layer and the strip;and a second region facing a portion of the emitter which does emit thelight rays.
 22. The optoelectronic device according to claim 16, furthercomprising a second transparent block mounted to the top surface of thefirst transparent block at a location facing a portion of the emitterwhich does emit the light rays.
 23. The optoelectronic device accordingto claim 22, further comprising an opaque layer covering a side surfaceof the second transparent block.
 24. The optoelectronic device accordingto claim 16, further comprising a filter located opposite a portion ofthe emitter which does emit the light rays and a filter located oppositea portion of the receiver which does receive the light rays.
 25. Anoptoelectronic device, comprising: an emitter of light rays; a firsttransparent block encapsulating the emitter and having a top surface anda side surface; a second transparent block mounted to the top surface ofthe first transparent block over the encapsulated emitter and having aside surface; a first layer that is opaque to wavelengths of the lightrays from the emitter and which extends on the top side and side surfaceof the first transparent block and further extends on the side surfaceof the second transparent block; and a receiver of light rays mounted onthe first layer over the top surface of the first transpatent block. 26.The optoelectronic device according to claim 25, wherein said firstlayer is electrically conductive and is electrically connected to thereceiver.
 27. The optoelectronic device according to claim 26, furthercomprising a second layer that is opaque to wavelengths of the lightrays from the emitter and which extends on the side surface of the firsttransparent block; wherein said second layer is electrically conductiveand is electrically connected to the receiver; and wherein the first andsecond layers are insulated from each other.
 28. The optoelectronicdevice according to claim 25, further comprising a third transparentblock encapsulating the receiver.